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STB6NB50

ST Microelectronics
Part Number STB6NB50
Manufacturer ST Microelectronics
Description N-CHANNEL Power MOSFET
Published Aug 3, 2005
Detailed Description ® STB6NB50 N - CHANNEL 500V - 1.35Ω - 5.8A - D2PAK/I2PAK PowerMESH™ MOSFET TYPE ST B6NB50 s s s s s V DSS 500 V R DS...
Datasheet PDF File STB6NB50 PDF File

STB6NB50
STB6NB50

Overview
® STB6NB50 N - CHANNEL 500V - 1.
35Ω - 5.
8A - D2PAK/I2PAK PowerMESH™ MOSFET TYPE ST B6NB50 s s s s s V DSS 500 V R DS(on) < 1.
5 Ω ID 5.
8 A TYPICAL RDS(on) = 1.
35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 12 1 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE I2PAK TO-262 (suffix ”-1”) D2PAK TO-263 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( • ) P tot dv/dt( 1 ) Ts tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max.
Operating Junction Temperature o o o Value 500 500 ± 30 5.
8 3.
7 23.
2 100 0.
8 4.
5 -65 to 150 150 ( 1) ISD ≤ 6A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Un it V V V A A A W W /o C V/ns o o C C (•) Pulse width limited by safe operating area November 1999 1/9 STB6NB50 THERMAL DATA R thj -case Rthj -amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 1.
25 62.
5 0.
5 300 C/W oC/W o C/W o C o AVALANCHE CHARACTERISTICS Symbo l IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width...


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