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STB60NF06

ST Microelectronics
Part Number STB60NF06
Manufacturer ST Microelectronics
Description N-CHANNEL Power MOSFET
Published Aug 3, 2005
Detailed Description N-CHANNEL 60V - 0.014Ω - 60A D2PAK STripFET™ POWER MOSFET TYPE STB60NF06 s s s s STB60NF06 VDSS 60V RDS(on) < 0.016 Ω...
Datasheet PDF File STB60NF06 PDF File

STB60NF06
STB60NF06

Overview
N-CHANNEL 60V - 0.
014Ω - 60A D2PAK STripFET™ POWER MOSFET TYPE STB60NF06 s s s s STB60NF06 VDSS 60V RDS(on) < 0.
016 Ω ID 60A s TYPICAL RDS(on) = 0.
014Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL 3 1 D2PAK DESCRIPTION This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge.
It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application.
It is also intended for any application with low gate charge drive requirements.
APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL s AUTOMOTIVE INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max.
Operating Junction Temperature Value 60 60 ± 20 60 42 240 110 0.
73 4 –65 to 175 175 (1) I SD≤ 60A, di/dt≤400 A/µs, VDD≤ 24V, Tj≤TjMAX Unit V V V A A A W W/°C V/ns °C °C (q) Pulse width limited by safe operating area February 2001 1/9 STB60NF06 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1.
36 62.
5 300 °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 30 V) Max Value 30 360 Unit A mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage ...


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