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STB60NF03L

ST Microelectronics
Part Number STB60NF03L
Manufacturer ST Microelectronics
Description N-CHANNEL Power MOSFET
Published Aug 3, 2005
Detailed Description ® STB60NF03L N-CHANNEL 30V - 0.008 Ω - 60A D2PAK STripFET™ POWER MOSFET PRELIMINARY DATA T YPE STB60NF03L s s V DSS 3...
Datasheet PDF File STB60NF03L PDF File

STB60NF03L
STB60NF03L

Overview
® STB60NF03L N-CHANNEL 30V - 0.
008 Ω - 60A D2PAK STripFET™ POWER MOSFET PRELIMINARY DATA T YPE STB60NF03L s s V DSS 30 V R DS(on) < 0.
01 Ω ID 60 A s s TYPICAL RDS(on) = 0.
008 Ω OPTIMIMIZED FOR HIGH SWITCHING OPERATIONS LOW THRESHOLD DRIVE LOGIC LEVEL GATE DRIVE 3 1 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process.
The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS s LOW VOLTAGE DC-DC CONVERTERS s HIGH CURRENT, HIGH SPEED SWITCHING s HIGH EFFICIENCY SWITCHING CIRCUITS D2PAK TO-263 ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( • ) P tot E AS ( 1 ) Ts tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max.
Operating Junction Temperature o o o Value 30 30 ± 20 60 42 240 100 0.
67 650 -65 to 175 175 ( 1) starting Tj = 25 oC, ID = 30A , VDD = 20V Un it V V V A A A W W /o C mJ o o C C 1/6 (•) Pulse width limited by safe operating area September 1999 STB60NF03L THERMAL DATA R thj -case R thj -amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature F or Soldering Purpose 1.
5 62.
5 300 o o C/W C/W o C ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µ A V GS = 0 Min.
30 1 10 ± 100 Typ.
Max.
Unit V µA µA nA V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current ...


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