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STD2NC60

ST Microelectronics
Part Number STD2NC60
Manufacturer ST Microelectronics
Description N-CHANNEL MOSFET
Published Aug 10, 2005
Detailed Description N-CHANNEL 600V - 3.3Ω - 2A DPAK / IPAK PowerMesh™II MOSFET TYPE STD2NC60 s s s s s STD2NC60 VDSS 600V RDS(on) < 3.6Ω ...
Datasheet PDF File STD2NC60 PDF File

STD2NC60
STD2NC60

Overview
N-CHANNEL 600V - 3.
3Ω - 2A DPAK / IPAK PowerMesh™II MOSFET TYPE STD2NC60 s s s s s STD2NC60 VDSS 600V RDS(on) < 3.
6Ω ID 2A TYPICAL RDS(on) = 3.
3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 3 1 DPAK IPAK 1 3 2 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.
The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVERS s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) ...


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