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STD2NC45


Part Number STD2NC45
Manufacturer ST Microelectronics
Title N-CHANNEL MOSFET
Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on...
Features C45 Q1NC45 PACKAGE IPAK TO-92 TO-92 PACKAGING TUBE BULK AMMOPAK June 2003 1/11 STD2NC45-1, STQ1NC45 ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) Tj Tstg Parameter STD2NC45-1 Value STQ1NC45 Unit V V V 0.5 0.315 2 3.1 0.025 A A A W W/°C V/ns °C °C Drain-source Voltag...

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STD2NC40-1 : The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. IPAK (SUFFIX“-1”) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s SWITH MODE LOW POWER SUPPLIES (SMPS) s CFL ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (s) PTOT dv/dt Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100° C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak D.

STD2NC45-1 : The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products. 3 2 1 IPAK Figure 1. Internal schematic diagram Table 1. Device summary Order code STD2NC45-1 Marking D2NC45 Package IPAK Packaging Tube April 2009 Doc ID 9103 Rev 4 1/13 www.st.com 13 Contents Contents STD2NC45-1 1 Electrical ratings . . .

STD2NC45-1 : isc N-Channel MOSFET Transistor STD2NC45-1 FEATURES ·Drain Current –ID=1.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.5Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 450 V ±30 V 1.5 A 6 A 30 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS.




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