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MTP6N60E

Motorola
Part Number MTP6N60E
Manufacturer Motorola
Description TMOS POWER FET
Published Aug 15, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP6N60E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect ...
Datasheet PDF File MTP6N60E PDF File

MTP6N60E
MTP6N60E

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP6N60E/D ™ Data Sheet TMOS E-FET.
™ Power Field Effect Transistor Designer's MTP6N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time.
In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain–to–source diode with a fast recovery time.
Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Robust High Voltage Termination • Avalanche Energy Specified • Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature G S TMOS POWER FET 6.
0 AMPERES 600 VOLTS RDS(on) = 1.
2 OHMS ® D CASE 221A–06, Style 5 TO–220AB MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Drain–to–Gate Voltage (RGS = 1.
0 MΩ) Gate–to–Source Voltage — Continuous — Non–Repetitive (tp ≤ 10 ms) Drain Current — Continuous — Continuous @ 100°C — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, IL = 2.
0 Apk, L = 10 mH, RG = 25 Ω) Thermal Resistance — Junction to Case° — Junction to Ambient° Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tstg EAS 405 RθJC RθJA TL 1.
0 62.
5 260 °C/W °C Value 600 600 ± 20 ± 40 6.
0 4.
6 18 125 1.
0 ...


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