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MTP6N60E

ON Semiconductor
Part Number MTP6N60E
Manufacturer ON Semiconductor
Description Power Field Effect Transistor
Published Jan 12, 2016
Detailed Description MTP6N60E Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced...
Datasheet PDF File MTP6N60E PDF File

MTP6N60E
MTP6N60E

Overview
MTP6N60E Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time.
In addition, this advanced MOSFET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain−to−source diode with a fast recovery time.
Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Robust High Voltage Termination • Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature http://onsemi.
com TMOS POWER FET 6.
0 AMPERES, 600 VOLTS RDS(on) = 1.
2 W TO−220AB CASE 221A−09 Style 5 D G S © Semiconductor Components Industries, LLC, 2013 May, 2013 − Rev.
7 1 Publication Order Number: MTP6N60E/D MTP6N60E MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.
0 MΩ) Gate−to−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) Drain Current − Continuous − Continuous @ 100°C − Single Pulse (tp ≤ 10 μs) Total Power Dissipation Derate above 25°C VDSS VDGR VGS VGSM ID ID IDM PD 600 Vdc 600 Vdc ± 20 Vdc ± 40 Vpk 6.
0 Adc 4.
6 18 Apk 125 Watts 1.
0 W/°C Operating and Storage Temperature Range TJ, Tstg −55 to 150 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, IL = 9.
0 Apk, L = 10 mH, RG = 25 Ω) EAS mJ 405 Thermal Resistance − Junction to Case° − Junction to Ambient° RθJC RθJA 1.
0 °C/W 62.
5 Maximum Lead Temperature for S...


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