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IRFS730B

Fairchild
Part Number IRFS730B
Manufacturer Fairchild
Description 400V N-Channel MOSFET
Published Aug 16, 2005
Detailed Description IRF730B/IRFS730B November 2001 IRF730B/IRFS730B 400V N-Channel MOSFET General Description These N-Channel enhancement ...
Datasheet PDF File IRFS730B PDF File

IRFS730B
IRFS730B

Overview
IRF730B/IRFS730B November 2001 IRF730B/IRFS730B 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.
Features • • • • • • 5.
5A, 400V, RDS(on) = 1.
0Ω @VGS = 10 V Low gate charge ( typical 25 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC =...


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