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IRFP450A

International Rectifier
Part Number IRFP450A
Manufacturer International Rectifier
Description Power MOSFET
Published Sep 11, 2005
Detailed Description PD -91884 SMPS MOSFET IRFP450A HEXFET® Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptabl...
Datasheet PDF File IRFP450A PDF File

IRFP450A
IRFP450A

Overview
PD -91884 SMPS MOSFET IRFP450A HEXFET® Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss Specified ( See AN 1001) l VDSS 500V Rds(on) max 0.
40Ω ID 14A TO-247AC G DS Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max.
14 8.
7 56 190 1.
5 ± 30 4.
1 -55 to + 150 300 (1.
6mm from case ) 10 lbf•in (1.
1N•m) Units A W W/°C V V/ns °C Typical SMPS Topologies: l l l Two Transistor Forward Half Bridge, Full Bridge PFC Boost through … are on page 8 Notes  www.
irf.
com 1 6/23/99 IRFP450A Static @ TJ = 25°C (unless otherwise specified) Parameter Min.
Drain-to-Source Breakdown Voltage 500 ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient ––– RDS(on) Static Drain-to-Source On-Resistance ––– VGS(th) Gate Threshold Voltage 2.
0 ––– IDSS Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– IGSS Gate-to-Source Reverse Leakage ––– V(BR)DSS Typ.
––– 0.
58 ––– ––– ––– ––– ––– ––– Max.
Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA† 0.
40 Ω VGS = 10V, ID = 8.
4A „ 4.
0 V VDS = VGS, ID = 250µA 25 VDS = 500V, VGS = 0V µA 250 VDS = 400V, VGS = 0V, TJ = 125°C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff.
Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller")...


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