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IRFP450

ST Microelectronics
Part Number IRFP450
Manufacturer ST Microelectronics
Description N-Channel Power MOSFET
Published Sep 11, 2005
Detailed Description ® IRFP450 N - CHANNEL 500V - 0.33Ω - 14A - TO-247 PowerMESH™ MOSFET TYPE V DSS RDS(on) ID IRFP450 500 V < 0.4 Ω 1...
Datasheet PDF File IRFP450 PDF File

IRFP450
IRFP450

Overview
® IRFP450 N - CHANNEL 500V - 0.
33Ω - 14A - TO-247 PowerMESH™ MOSFET TYPE V DSS RDS(on) ID IRFP450 500 V < 0.
4 Ω 14 A s TYPICAL RDS(on) = 0.
33 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process.
This technology matches and improves the performances compared with standard parts from various sources.
APPLICATIONS s HIGH CURRENT SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.
3 2 1 TO-247 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain- gate Voltage (RGS = 20 kΩ) VGS Gat e-source Voltage ID Drain Current (continuous) at Tc = 25 oC ID Drain Current (continuous) at Tc = 100 oC IDM ( •) Ptot Drain Current (pulsed) Tot al Dissipation at Tc = 25 oC Derating Factor ...


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