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2N2907A

Seme LAB
Part Number 2N2907A
Manufacturer Seme LAB
Description HIGH SPEED MEDIUM POWER PNP TRANSISTOR
Published Sep 15, 2005
Detailed Description LAB MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) SEME 2N2907A HIGH S...
Datasheet PDF File 2N2907A PDF File

2N2907A
2N2907A

Overview
LAB MECHANICAL DATA Dimensions in mm (inches) 5.
84 (0.
230) 5.
31 (0.
209) 4.
95 (0.
195) 4.
52 (0.
178) SEME 2N2907A HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR 5.
33 (0.
210) 4.
32 (0.
170) FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR • HIGH SPEED SATURATED SWITCHING • ALSO AVAILABLE IN CERAMIC SURFACE MOUNT PACKAGE • CECC SCREENING OPTIONS • SPACE QUALITY LEVELS OPTIONS 0.
48 (0.
019) 0.
41 (0.
016) dia.
2.
54 (0.
100) Nom.
3 2 1 TO–18 METAL PACKAGE Underside View PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD TJ , TSTG Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Telephone +44(0)1455 556565.
Fax +44(0)1455 552612.
E-mail: sales@semelab.
co.
uk Website: http://www.
semelab.
co.
uk 12.
7 (0.
500) min.
–60V –60V –5V 600mA 400mW 2.
28mW / °C 1.
8W 10.
3mW / °C –65 to +200°C Prelim.
4/96 Semelab plc.
LAB ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO IB 1 SEME 2N2907A Test Conditions IB = 0 IE = 0 IC = 0 VBE = 0.
5V VCB = 50V TA = 150°C VCE = 60V IC = 150mA IC = 500mA IC = 150mA IC = 500mA IC = 0.
1mA IC = 1mA VBE = 0.
5V IB = 15mA IB = 50mA IB = 15mA 1 IC = 50mA VCE = 10V VCE = 10V VCE = 10V VCE = 10V 1 VCE = 10V VCE = 20V IE = 0 IC = 0 1 Min.
60 60 5 Typ.
Max.
Unit V OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage IC = 10mA Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Base Current ON CHARACTERISTICS IC = 10mA IE = 10mA VCE = 30V IE = 0 V V 50 0.
01 10 50 0.
4 1.
6 m nA A nA VCE(sat)1 VBE(sat) Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage V V 0.
6 75 100 100 100 50 1.
3 2.
6 hFE DC Current Gain IC = ...


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