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MRF427

Advanced Semiconductor
Part Number MRF427
Manufacturer Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
Published Sep 20, 2005
Detailed Description MRF427 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF427 is Designed for high voltage applications up to 30 M...
Datasheet PDF File MRF427 PDF File

MRF427
MRF427

Overview
MRF427 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF427 is Designed for high voltage applications up to 30 MHz PACKAGE STYLE .
500 4L FLG .
112x45° L A FULL R FEATURES: • PG = 18 dB min.
at 25 W/30 MHz • IMD3 = -34 dBc max.
at 25 W (PEP) • Omnigold™ Metalization System E C Ø.
125 NOM.
C B B D G F E E H MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC O O I J K 6.
0 A 110 V 65 V 4.
0 V 80 W @ TC = 25 °C -65 C to +200 °C -65 C to +150 °C 2.
19 °C/W ° DIM A B C D E F G H I J K L MINIMUM inches / mm MAXIMUM inches / mm .
220 / 5.
59 .
125 / 3.
18 .
245 / 6.
22 .
720 / 18.
28 .
125 / 3.
18 .
970 / 24.
64 .
495 / 12.
57 .
003 / 0.
08 .
090 / 2.
29 .
150 / 3.
81 .
230 / 5.
84 .
255 / 6.
48 .
7.
30 / 18.
54 .
980 / 24.
89 .
505 / 12.
83 .
007 / 0.
18 .
110 / 2.
79 .
175 / 4.
45 .
280 / 7.
11 .
980 / 24.
89 1.
050 / 26.
67 ORDER CODE: ASI10467 CHARACTERISTICS SYMBOL BVCBO BVCES BVCEO BVEBO hFE Cob GP IMD3 TC = 25 C NONETEST CONDITIONS IC = 100 mA IC = 100 mA IC = 200 mA IE = 10 mA VCE = 5.
0 V VCB = 50 V IC = 500 mA f = 1.
0 MHz MINIMUM TYPICAL MAXIMUM 110 110 65 4.
0 15 90 60 18 20 - 37 -34 UNITS V V V V --pF dB dBc VCE = 50 V POUT = 25 W (PEP) f = 30 MHz A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice.
REV.
A 1/1 ...


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