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IXFR12N100F

IXYS Corporation
Part Number IXFR12N100F
Manufacturer IXYS Corporation
Description HiPerFET Power MOSFETs
Published Sep 23, 2005
Detailed Description HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM VDSS ID25 RDS(on) 1.05 Ω 1.20 Ω 12N100F 1000 V 10 A IXFR 10N100F 1000 V 9...
Datasheet PDF File IXFR12N100F PDF File

IXFR12N100F
IXFR12N100F

Overview
HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM VDSS ID25 RDS(on) 1.
05 Ω 1.
20 Ω 12N100F 1000 V 10 A IXFR 10N100F 1000 V 9A F-Class: MegaHertz Switching trr ≤ 250 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Symbol Test Conditions 1.
6 mm (0.
063 in.
) from case for 10 s 50/60 Hz, RMS t = 1 min Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C 12N100 10N100 12N100 10N100 12N100 10N100 Maximum Ratings 1000 1000 ± 20 ± 30 10 9 48 40 12 10 31 1 5 250 -40 .
.
.
+150 150 -40 .
.
.
+150 300 2500 5 V V V V A A A A A A mJ J V/ns W °C °C °C °C V~ g ISOPLUS 247TM (IXFR) G (TAB) D Isolated back surface* G = Gate S = Source D = Drain T...


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