DatasheetsPDF.com

IXFR12N100Q

IXYS Corporation
Part Number IXFR12N100Q
Manufacturer IXYS Corporation
Description N-Channel Enhancement Mode Avalanche Rated / High dV/dt Low Gate Charge and Capacitances
Published Sep 23, 2005
Detailed Description Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 12N100Q ISOPLUS247TM Q CLASS VDSS ID25 RDS(on) 1.05 W 1...
Datasheet PDF File IXFR12N100Q PDF File

IXFR12N100Q
IXFR12N100Q

Overview
Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 12N100Q ISOPLUS247TM Q CLASS VDSS ID25 RDS(on) 1.
05 W 1.
20 W 1000 V 10 A IXFR 10N100Q 1000 V 9A (Electrically Isolated Back Surface) trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Symbol Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS T J £ 150°C, RG = 2 W TC = 25°C 12N100 10N100 12N100 10N100 12N100 10N100 Maximum Ratings 1000 1000 ±20 ±30 10 9 48 40 12 10 30 5 250 -55 .
.
.
+150 150 -55 .
.
.
+150 1.
6 mm (0.
063 in.
) from case for 10 s 50/60 Hz, RMS t = 1 min 300 2500 5 V V V V A A A A A A mJ V/ns W °C °C °C °C V~ g Features ISOPLUS 247TM VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Weight G D Isolated back surface* D = Drain G = Gate S = Source * Patent pending • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(<50pF) • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Fast intrinsic Rectifier Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
1000 2.
5 5.
5 ±100 TJ = 25°C TJ = 125°C 12N100 10N100 50 1 1.
05 1.
2 V V nA mA mA W W Advantages • Easy assembly • Space savings • High power density • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 4mA VGS = ±20 VDC, VDS = 0 VDS = 0.
8 • VDSS VGS = 0 V VGS = 10 V, ID = IT Notes 1 & 2 IXYS reserves the right to change limits, test conditions, and dimensions.
98589 (1/99) © 2000 IXYS All rights reserved 1-2 IXFR 10N100Q IXFR 12N100Q Symbol Test Conditions Characterist...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)