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FDQ7238S

Fairchild Semiconductor
Part Number FDQ7238S
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Sep 26, 2005
Detailed Description FDQ7238S September 2003 FDQ7238S Dual Notebook Power Supply N-Channel PowerTrench in SO-14 Package   General Descript...
Datasheet PDF File FDQ7238S PDF File

FDQ7238S
FDQ7238S

Overview
FDQ7238S September 2003 FDQ7238S Dual Notebook Power Supply N-Channel PowerTrench in SO-14 Package   General Description The FDQ7238S is designed to replace two single SO-8 MOSFETs in DC to DC power supplies.
The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses using Fairchild’s SyncFET TM technology.
Features • Q2: 14 A, 30V.
RDS(on) = 9.
5 mΩ @ VGS = 10V RDS(on) = 10.
5 mΩ @ VGS = 4.
5V • Q1: 11 A, 30V.
RDS(on) = 14.
5 mΩ @ VGS = 10V RDS(on) = 16 mΩ @ VGS = 4.
5V SO-14 pin 1 Vin G1 G2 S2 S2 S2 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current TA = 25° C unless otherwise noted Parameter Q2 30 ±16 (Note 1a) Q1 30 ±16 11 50 1.
8 1.
1 −55 to +150 Units V V A W °C - Continuous - Pulsed Power Dissipation for Single Operation (Note 1a & 1b) (Note 1c & 1d) 14 50 2.
4 1.
3 Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a & 1b) (Note 1c & 1d) 52 94 68 118 °C/W Package Marking and Ordering Information Device Marking FDQ7238S Device Reel Size 13” FDQ7238S Tape width 16mm Quantity 2500 units ©2003 Fairchild Semiconductor Corporation FDQ7238S Rev A1 (W) FDQ7238S Electrical Characteristics Symbol BVDSS TA = 25° C unless otherwise noted Parameter Test Conditions Type Min Typ Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 50 50 67 48 2872 1906 522 311 186 134 1.
5 0.
8 14 11 13 13 51 28 18 15 48 33 6 4 8 4 30 30 26 25 Max Units V mV/°C 500 1 100 100 −100 −100 µA nA nA Off Characteristics ∆BVDSS ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage VGS = 0 V, ID = 1 mA VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature ID = 10 mA, Referenced to 25°C Coefficient ID = 250 µA, Referenced to 25°C Zero Gate Voltage Drain Current VDS = 2...


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