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FDQ7238AS

Fairchild Semiconductor
Part Number FDQ7238AS
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Nov 30, 2015
Detailed Description FDQ7238AS May 2008 FDQ7238AS Dual Notebook Power Supply N-Channel PowerTrench® in SO-14 Package General Description Th...
Datasheet PDF File FDQ7238AS PDF File

FDQ7238AS
FDQ7238AS


Overview
FDQ7238AS May 2008 FDQ7238AS Dual Notebook Power Supply N-Channel PowerTrench® in SO-14 Package General Description The FDQ7238AS is designed to replace two single SO8 MOSFETs in DC to DC power supplies.
The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses using Fairchild’s SyncFET TM technology.
The FDQ7238AS includes a patented combination of a MOSFET monolithically integrated with a Schottky diode.
Features • Q2: 14 A, 30V.
RDS(on) = 8.
7 mΩ @ VGS = 10V RDS(on) = 10.
5 mΩ @ VGS = 4.
5V • Q1: 11 A, 30V.
RDS(on) = 13.
2 mΩ @ VGS = 10V RDS(on) = 16 mΩ @ VGS = 4.
5V SO-14 pin 1 S2 S2 S2 G1G2 Vin Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1a & 1b) (Note 1c & 1d) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a & 1b) (Note 1c & 1d) Package Marking and Ordering Information Device Marking FDQ7238AS Device FDQ7238AS Reel Size 13” Q2 Q1 30 30 ±20 ±20 14 11 50 50 2.
4 1.
8 1.
3 1.
1 −55 to +150 52 68 94 118 Units V V A W °C °C/W Tape width 16mm Quantity 2500 units ©2008 Fairchild Semiconductor Corporation FDQ7238AS Rev A1(X) FDQ7238AS Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS Drain-Source Breakdown VGS = 0 V, ID = 1 mA Voltage VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25°C ID = 250 µA, Referenced to 25°C Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IGSS Gate-Body Leakage On Characteristics (Note 2) VGS(th) Gate Threshold Voltage ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resis...


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