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IRFZ48Z

International Rectifier
Part Number IRFZ48Z
Manufacturer International Rectifier
Description AUTOMOTIVE MOSFET
Published Sep 29, 2005
Detailed Description PD - 94763 AUTOMOTIVE MOSFET Features O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Ra...
Datasheet PDF File IRFZ48Z PDF File

IRFZ48Z
IRFZ48Z

Overview
PD - 94763 AUTOMOTIVE MOSFET Features O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G HEXFET® Power MOSFET D IRFZ48Z IRFZ48ZS IRFZ48ZL VDSS = 55V Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
RDS(on) = 11mΩ S ID = 61A TO-220AB IRFZ48Z D2Pak IRFZ48ZS Max.
61 43 240 91 0.
61 ± 20 73 120 See Fig.
12a,12b,15,16 -55 to + 175 TO-262 IRFZ48ZL Units A Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS EAS (tested) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (See Fig.
9) Pulsed Drain Current c Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current W W/°C V mJ A mJ °C c i d Repetitive Avalanche Energy Operating Junction and Storage Temperature Range h Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw 300 (1.
6mm from case ) 10 lbf•in (1.
1N•m) Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB Mount, steady state) Typ.
––– 0.
50 ––– ––– Max.
1.
64 ––– 62 40 Units °C/W j HEXFET® is a registered trademark of International Rectifier.
www.
irf.
com 1 08/27/03 IRFZ48Z/S/L Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆ΒVDSS/∆TJ RDS(on)...


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