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SD1729

ST Microelectronics
Part Number SD1729
Manufacturer ST Microelectronics
Description RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Published Sep 30, 2005
Detailed Description SD1729 (TH416) RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . . . . OPTIMIZED FOR SSB 30 MHz 28 VOLTS IMD −30 ...
Datasheet PDF File SD1729 PDF File

SD1729
SD1729

Overview
SD1729 (TH416) RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS .
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OPTIMIZED FOR SSB 30 MHz 28 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION P OUT = 130 W PEP WITH 12 dB GAIN .
500 4LFL (M174) epoxy sealed ORDER CODE SD1729 BRANDING TH416 PIN CONNECTION DESCRIPTION The SD1729 is a Class AB 28 V epitaxial silicon NPN planar transistor designed primarily for SSB communications.
This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions.
ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1.
Collector 2.
Emitter 3.
Base 4.
Emitter VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 70 35 4.
0 12 175 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistance 1.
0 °C/W 1/4 SD1729 (TH416) ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min.
Typ.
Max.
Unit BVCES BVCEO BVEBO ICES hFE IC = 50 mA IC = 100 mA IE = 20 mA VCE = 35 V VCE = 5 V VBE = 0 V IB = 0 mA IC = 0 mA IE = 0 mA IC = 7 A 70 35 4.
0 — 18 — — — — — — — — 20 50 V V V mA — DYNAMIC Symbol Test Conditions Value Min.
Typ.
Max.
Unit POUT GP IMD* ηc COB Note: * f1 f = 30 MHz POUT = 130 W PEP POUT = 130 W PEP POUT = 130 W PEP f = 1 MHz = 30.
00 MHz, f2 VCE = 28 V VCE = 28 V VCE = 28 V VCE = 28 V VCB = 28 V ICQ = 150 mA ICQ = 150 mA ICQ = 150 mA ICQ = 150 mA 130 12 — 37 — — — — — 220 — — −30 — — W dB dBc % pF = 30.
001 MHz TYPICAL PERFORMANCE SAFE OPERATING AREA 2/4 SD1729 (TH416) TYPICAL PERFORMANCE (cont’d) INTERMODULATION DISTORTION vs POWER OUTPUT TEST CIRCUIT C1 C2 C3, C4 C5 C6 C7 C8 C9 C10, C11 : : : : : : : : : 20 - 120pF 50 - 300pF 3.
9nF 100nF 2.
2µF 2 x 180pF in Parallel 3 x 56pF and 33pF in Parallel 4 x 56pF and 68pF in Parallel 360pF L1 : L2 : L3, L5 : L4 : R1 R2 R3 88nF 22µH Choke Coil 80nF Ferro...


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