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SD1727

ST Microelectronics
Part Number SD1727
Manufacturer ST Microelectronics
Description RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Published Sep 30, 2005
Detailed Description SD1727 (THX15) RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD − 30...
Datasheet PDF File SD1727 PDF File

SD1727
SD1727

Overview
SD1727 (THX15) RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS .
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OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD − 30 dB COMMON EMITTER GOLD METALLIZATION POUT = 150 W PEP MIN.
WITH 14 dB GAIN .
500 4LFL (M164) epoxy sealed ORDER CODE SD1727 BRANDING THX15 PIN CONNECTION DESCRIPTION The SD1727 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications.
This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions.
ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1.
Collector 2.
Emitter 3.
Base 4.
Emitter VCBO VCEO VEBO IC PDISS TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 110 55 4.
0 10 233 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistance 0.
75 °C/W 1/7 SD1727 (THX15) ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min.
Typ.
Max.
Unit BVCBO BVCES BVCEO BVEBO ICEO ICES hFE DYNAMIC Symbol IC = 100mA IC = 100mA IC = 100mA IE = 10mA VCE = 30V VCE = 60V VCE = 6V IE = 0mA VBE = 0V IB = 0mA IC = 0mA IE = 0mA IE = 0mA IC = 1.
4A 110 110 55 4.
0 — — 18 — — — — — — — — — — — 5 5 43.
5 V V V V mA mA — Test Conditions Value Min.
Typ.
Max.
Unit POUT G P* IMD* ηc* COB Note: P OUT * f1 f = 30 MHz POUT = 150 W PEP POUT = 150 W PEP POUT = 150 W PEP f = 1 MHz VCE = 50 V VCE = 50 V VCE = 50 V VCE = 50 V VCB = 50 V ICQ = 100mA ICQ = 100mA ICQ = 100mA ICQ = 100mA 150 14 — 37 — — — — — — — — −30 — 220 W dB dBc % pF The SD1727 is also usable in Class A at 40 V.
Typical performance is: = 30 W PEP, G P = 14 dB, IMD = − 40dBc = 30.
00 MHz; f 2 = 30.
001 MHz 2/7 SD1727 (THX15) TYPICAL PERFORMANCE INTERMODULATION DISTORTION vs POWER OUTPUT PEP POWER OUTPUT PEP vs POWER INPUT COLLECTOR EFFICIENCY vs POWER OUTPUT PEP 3/7 SD1727 (THX15) TYPICAL PERFORMANCE (cont’d) POWER GAIN ...


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