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SST39VF088

Silicon Storage Technology
Part Number SST39VF088
Manufacturer Silicon Storage Technology
Description 8 Mbit (x8) Multi-Purpose Flash
Published Oct 12, 2005
Detailed Description 8 Mbit (x8) Multi-Purpose Flash SST39VF088 SST39VF0882.7V 8Mb (x8) MPF memory Preliminary Specifications FEATURES: • O...
Datasheet PDF File SST39VF088 PDF File

SST39VF088
SST39VF088


Overview
8 Mbit (x8) Multi-Purpose Flash SST39VF088 SST39VF0882.
7V 8Mb (x8) MPF memory Preliminary Specifications FEATURES: • Organized as 1M x8 • Single Voltage Read and Write Operations – 2.
7-3.
6V • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption (typical values at 5 MHz) – Active Current: 12 mA (typical) – Standby Current: 4 µA (typical) • Sector-Erase Capability – Uniform 4 KByte sectors • Block-Erase Capability – Uniform 64 KByte blocks • Fast Read Access Time: – 70 and 90 ns • Latched Address and Data • Fast Erase and Byte-Program – Sector-Erase Time: 18 ms (typical) – Block-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Byte-Program Time: 14 µs (typical) – Chip Rewrite Time: 15 seconds (typical) • Automatic Write Timing – Internal VPP Generation • End-of-Write Detection – Toggle Bit – Data# Polling • CMOS I/O Compatibility • JEDEC Standard – Flash EEPROM Pinouts and command sets • Packages Available – 48-lead TSOP (12mm x 20mm) PRODUCT DESCRIPTION The SST39VF088 device is a 1M x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology.
The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.
The SST39VF088 writes (Program or Erase) with a 2.
7-3.
6V power supply.
It conforms to JEDEC standard pinouts for x8 memories.
Featuring high performance Byte-Program, the SST39VF088 device provides a typical Byte-Program time of 14 µsec.
The devices use Toggle Bit or Data# Polling to indicate the completion of Program operation.
To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes.
Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed endurance of 10,000 cycles.
Data retention is rated at greater than 100 years.
The SST39VF088 device i...


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