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SST39VF016

Silicon Storage Technology
Part Number SST39VF016
Manufacturer Silicon Storage Technology
Description 8 Mbit / 16 Mbit (x8) Multi-Purpose Flash
Published Oct 12, 2005
Detailed Description 8 Mbit / 16 Mbit (x8) Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 SST39LF/VF080 / 0163.0 & 2.7...
Datasheet PDF File SST39VF016 PDF File

SST39VF016
SST39VF016

Overview
8 Mbit / 16 Mbit (x8) Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 SST39LF/VF080 / 0163.
0 & 2.
7V 8Mb / 16Mb (x8) MPF memories Data Sheet FEATURES: • Organized as 1M x8 / 2M x8 • Single Voltage Read and Write Operations – 3.
0-3.
6V for SST39LF080/016 – 2.
7-3.
6V for SST39VF080/016 • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption: – Active Current: 15 mA (typical) – Standby Current: 4 µA (typical) – Auto Low Power Mode: 4 µA (typical) • Sector-Erase Capability – Uniform 4 KByte sectors • Block-Erase Capability – Uniform 64 KByte blocks • Fast Read Access Time: – 55 ns for SST39LF080/016 – 70 and 90 ns for SST39VF080/016 • Latched Address and Data • Fast Erase and Byte-Program: – Sector-Erase Time: 18 ms (typical) – Block-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Byte-Program Time: 14 µs (typical) – Chip Rewrite Time: 15 seconds (typical) for SST39LF/VF080 30 seconds (typical) for SST39LF/VF016 • Automatic Write Timing – Internal VPP Generation • End-of-Write Detection – Toggle Bit – Data# Polling • CMOS I/O Compatibility • JEDEC Standard – Flash EEPROM Pinouts and command sets • Packages Available – 40-lead TSOP (10mm x 20mm) – 48-ball TFBGA (6mm x 8mm) PRODUCT DESCRIPTION The SST39LF/VF080 and SST39LF/VF016 devices are 1M x8 / 2M x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology.
The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.
The SST39LF080/016 write (Program or Erase) with a 3.
0-3.
6V power supply.
The SST39VF080/016 write (Program or Erase) with a 2.
7-3.
6V power supply.
They conform to JEDEC standard pinouts for x8 memories.
Featuring high performance Byte-Program, the SST39LF/ VF080 and SST39LF/VF016 devices provide a typical Byte-Program time of 14 µsec.
The devices use Toggle Bit...


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