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MPSH10

NXP
Part Number MPSH10
Manufacturer NXP
Description NPN 1 GHz general purpose switching transistor
Published Oct 14, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSH10 NPN 1 GHz general purpose switching transistor Produc...
Datasheet PDF File MPSH10 PDF File

MPSH10
MPSH10

Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSH10 NPN 1 GHz general purpose switching transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1998 Aug 27 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor FEATURES • Low cost • High power gain.
DESCRIPTION Silicon NPN general purpose transistor in a SOT54 (TO-92) package.
PNP complement is the MPSH81.
PINNING PIN 1 2 3 DESCRIPTION collector emitter base page MPSH10 1 2 3 MSB033 Marking code: PSH10.
Fig.
1 SOT54.
QUICK REFERENCE DATA SYMBOL VCBO VCEO VEBO Ptot Tj hFE Cre Crb fT rbCc Note 1.
Ts is the temperature at the soldering point of the collector lead, 4 mm from the body.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1.
Ts is the temperature at the soldering point of the collector lead, 4 mm from the body.
PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts = 25 °C; note 1 open base open collector CONDITIONS open emitter MIN.
− − − − − −65 − MAX.
30 25 3 40 1 +150 150 UNIT V V V mA W °C °C PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage total power dissipation junction temperature DC current gain collector-base feedback capacitance transition frequency collector-base time constant VCE = 10 V; IC = 4 mA VCB = 10 V; IE = 0; f = 1 MHz VCE = 10 V; IC = 4 mA; f = 100 MHz; Tamb = 25 °C VCE = 10 V; IC = 4 mA; f = 100 MHz; Tamb = 25 °C collector-emitter feedback capacitance VCB = 10 V; IE = 0; f = 1 MHz open base open collector Ts = 25 °C; note 1 CONDITIONS open emitter MIN.
− − − − − 60 − 0.
35 650 − MAX.
30 25 3 1 150 − 0.
7 0.
65 − 9 pF pF MHz ps V V V W °C UNIT 1998 Aug 27 2 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor THERMAL CHA...


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