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MPSH10

Fairchild Semiconductor
Part Number MPSH10
Manufacturer Fairchild Semiconductor
Description NPN RF Transistor
Published Oct 14, 2005
Detailed Description MPSH10 / MMBTH10 Discrete POWER & Signal Technologies MPSH10 MMBTH10 C E C E TO-92 B SOT-23 Mark: 3E B NPN RF Tr...
Datasheet PDF File MPSH10 PDF File

MPSH10
MPSH10

Overview
MPSH10 / MMBTH10 Discrete POWER & Signal Technologies MPSH10 MMBTH10 C E C E TO-92 B SOT-23 Mark: 3E B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators.
Sourced from Process 42.
Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 25 30 3.
0 50 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits.
The factory should be consulted on applications involving pulsed or low duty c...


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