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MPSH11

Fairchild Semiconductor
Part Number MPSH11
Manufacturer Fairchild Semiconductor
Description NPN RF Transistor
Published Oct 14, 2005
Detailed Description MPSH11 / MMBTH11 Discrete POWER & Signal Technologies MPSH11 MMBTH11 C E C BE TO-92 SOT-23 Mark: 3G B NPN RF Tran...
Datasheet PDF File MPSH11 PDF File

MPSH11
MPSH11

Overview
MPSH11 / MMBTH11 Discrete POWER & Signal Technologies MPSH11 MMBTH11 C E C BE TO-92 SOT-23 Mark: 3G B NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers.
Sourced from Process 47.
Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 25 30 3.
0 50 -55 to +150 Units V V V mA °C Operating and Storage Junc...


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