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2N5401G

ON Semiconductor
Part Number 2N5401G
Manufacturer ON Semiconductor
Description Amplifier Transistors
Published Oct 15, 2005
Detailed Description 2N5400, 2N5401 Preferred Device Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available* http://o...
Datasheet PDF File 2N5401G PDF File

2N5401G
2N5401G

Overview
2N5400, 2N5401 Preferred Device Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available* http://onsemi.
com COLLECTOR 3 MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD 625 5.
0 PD 1.
5 12 TJ, Tstg −55 to +150 Watts mW/°C °C 12 3 mW mW/°C TO−92 CASE 29 STYLE 1 2N5400 2N5401 120 130 5.
0 600 150 160 Unit Vdc Vdc Vdc mAdc 1 EMITTER 2 BASE Maximum ratings are those values beyond which device damage can occur.
M...


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