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STS3DPFS30L

ST Microelectronics
Part Number STS3DPFS30L
Manufacturer ST Microelectronics
Description P - CHANNEL MOSFET PLUS SCHOTTKY RECTIFIER
Published Oct 20, 2005
Detailed Description ® STS3DPFS30L ™ STripFET MOSFET V DSS 30V SCHOTTKY IF(AV) 3A P - CHANNEL 30V - 0.13Ω - 3A S0-8 MOSFET PLUS SCHOTTKY R...
Datasheet PDF File STS3DPFS30L PDF File

STS3DPFS30L
STS3DPFS30L

Overview
® STS3DPFS30L ™ STripFET MOSFET V DSS 30V SCHOTTKY IF(AV) 3A P - CHANNEL 30V - 0.
13Ω - 3A S0-8 MOSFET PLUS SCHOTTKY RECTIFIER PRELIMINARY DATA R DS(on) <0.
16 Ω V RRM 30V ID 3A V F(MAX) 0.
51V MAIN PRODUCT CHARACTERISTICS DESCRIPTION: This product associates the latest low voltage StripFET ™ in p-channel version to a low drop Schottky diode.
Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones.
SO-8 INTERNAL SCHEMATIC DIAGRAM MOSFET ABSOLUTE MAXIMUM RATINGS Symbol VDS V DGR V GS ID ID IDM ( • ) P tot Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C o o Value 30 30 ± 20 3 1.
9 12 2 Unit V V V A A A W SCHOTTKY ABSOLUTE MAXIMUM RATINGS Symbol V RRM I F(RMS) I F(AV) I FSM I RSM dv/dt Parameter Repetitive Peak Reverse Voltage RMS Forward Current Average Forward Current Surge Non Repetitive Forward Current Non Repetitive Peak Reverse Current Critical Rate Of Rise Of Reverse Voltage T L =125 o C δ =0.
5 tp= 10 ms Sinusoidal tp=100 µ s Value 30 20 3 75 1 10000 Unit V A A A A V/ µ s (•) Pulse width limited by safe operating area Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed May 2000 1/5 STS3DPFS30L THERMAL DATA R thj-amb R thj-amb T stg Tj (*)Thermal Resistance Junction-ambient MOSFET S.
O.
Dual Operating (*) Thermal Resistance Junction-ambientSCHOTTKY Storage Temperature Range Maximum Junction Temperature (*) mounted on FR-4 board (steady state) 78 62 100 -65 to 150 150 o o C/W C/W o C/W o C o C MOSFET ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µ A V GS = 0 Min.
30 1 10 ±1 Typ.
Max.
Unit V µA µA µA Zero Gate Volta...


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