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STS3DPFS30

ST Microelectronics
Part Number STS3DPFS30
Manufacturer ST Microelectronics
Description P - CHANNEL MOSFET PLUS SCHOTTKY RECTIFIER
Published Oct 20, 2005
Detailed Description ® STS3DPFS30 ™ STripFET P - CHANNEL 30V - 0.065Ω - 3A - S0-8 MOSFET PLUS SCHOTTKY RECTIFIER PRELIMINARY DATA MAIN PR...
Datasheet PDF File STS3DPFS30 PDF File

STS3DPFS30
STS3DPFS30

Overview
® STS3DPFS30 ™ STripFET P - CHANNEL 30V - 0.
065Ω - 3A - S0-8 MOSFET PLUS SCHOTTKY RECTIFIER PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS 30V SCHOTTKY IF(AV) 3A R DS(on) 0.
09 Ω V RRM 30V ID 3A V F(MAX) 0.
51V SO-8 DESCRIPTION: This product associates the latest low voltage StripFET ™ in p-channel version to a low drop Schottky diode.
Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones.
INTERNAL SCHEMATIC DIAGRAM MOSFET ABSOLUTE MAXIMUM RATINGS Symbol VDS V DGR V GS ID ID IDM ( • ) P tot Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C o Value 30 30 ± 20 3 1.
9 12 2 Unit V V V A A A W SCHOTTKY ABSOLUTE MAXIMUM RATINGS Symbol V RRM I F(RMS) I F(AV) I FSM I RRM I RSM dv/dt Parameter Repetitive Peak Reverse Voltage RMS Forward Current Average Forward Current Surge Non Repetitive Forward Current Repetitive Peak Reverse Current Non Repetitive Peak Reverse Current Critical Rate Of Rise Of Reverse Voltage T L =125 C δ =0.
5 tp= 10 ms Sinusoidal tp=2 µ s F=1 kHz tp=100 µ s o Value 30 20 3 75 1 1 10000 Unit V A A A A A V/ µ s (•) Pulse width limited by safe operating area Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed February 1999 1/5 STS3DPFS30 THERMAL DATA R thj-amb R thj-amb T stg Tj (*) Thermal Resistance Junction-ambient MOSFET (*) Thermal Resistance Junction-ambientSCHOTTKY Storage Temperature Range Maximum Junction Temperature (*) mounted on FR-4 board (steady state) 85 100 -65 to 150 150 o o C/W C/W o C o C MOSFET ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µ A V GS = 0 Min.
30 1 10 ± 100 Ty...


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