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BD951

CDIL
Part Number BD951
Manufacturer CDIL
Description NPN PLASTIC POWER TRANSISTOR
Published Nov 1, 2005
Detailed Description Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package IS/ISO 9002 Lic#...
Datasheet PDF File BD951 PDF File

BD951
BD951

Overview
Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package IS/ISO 9002 Lic# QSC/L- 000019.
2 IS / IECQC 700000 IS / IECQC 750100 BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD949, 951, 953, 955 BD950, 952, 954, 956 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Amplifier and Switching Applications PIN CONFIGURATION 1.
BASE 2.
COLLECTOR 3.
EMITTER 4.
COLLECTOR 4 1 2 3 B H F C E DIM A B C D E F G H J K L M N O MIN .
14.
42 9.
63 3.
56 MAX.
N L O 1 2 3 D G J M 16.
51 10.
67 4.
83 0.
90 1.
15 1.
40 3.
75 3.
88 2.
29 2.
79 2.
54 3.
43 0.
56 12.
70 14.
73 2.
80 4.
07 2.
03 2.
92 31.
24 DEG 7 A O ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) VCBO Collector-emitter voltage (open base) VCEO Collector current IC Total power dissipation up to Tmb = 25°C Ptot Junction temperature Tj Collector-emitter saturation voltage VCEsat IC = 2 A; IB = 0.
2 A D.
C.
current gain hFE IC = 2 A; VCE = 4 V RATINGS (at TA=25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current VCBO VCEO VEBO IC All dimin sions in mm.
K 949 950 max.
60 max.
60 max.
max.
max.
max.
min.
949 950 max.
60 max.
60 max.
max.
951 953 952 954 80 100 80 100 5.
0 40 150 1.
0 20 951 953 952 954 80 100 80 100 5.
0 5.
0 955 956 120 120 V V A W °C V 955 956 120 120 V V V A Continental Device India Limited Data Sheet Page 1 of 3 BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 Collector current (Peak value) Total power dissipation upto Tmb =25°C Junction temperature Storage temperature THERMAL RESISTANCE From junction to ambient From junction to mounting base CHARACTERISTICS Tamb = 25°C unless otherwise specified Collector cutoff current IE = 0; VCB = VCBO IE = 0; VCB = ½ VCBO; Tj = 150°C IB = 0; VCE = ½ VCEO Emitter cut-off current IC = 0; VEB = 5 V Breakdown voltages IC = 1 mA; IB = 0 IC = 1 mA; IE = 0 ...


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