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MTP50N06VL

Motorola
Part Number MTP50N06VL
Manufacturer Motorola
Description TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM
Published Nov 2, 2005
Detailed Description MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP50N06VL/D TMOS V Power Field Effect Transi...
Datasheet PDF File MTP50N06VL PDF File

MTP50N06VL
MTP50N06VL


Overview
MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP50N06VL/D TMOS V Power Field Effect Transistor TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs.
This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices.
Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes.
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
™ Data Sheet MTP50N06VL Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.
032 OHM TM D New Features of TMOS V • On–resistance Area Product about One–half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E–FET Predecessors Features Common to TMOS V and TMOS E–FETS • Avalanche Energy Specified • IDSS and VDS(on) Specified at Elevated Temperature • Static Parameters are the Same for both TMOS V and TMOS E–FET MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Drain–to–Gate Voltage (RGS = 1.
0 MΩ) Gate–to–Source Voltage — Continuous Gate–Source Voltage — Non–repetitive (tp ≤ 10 ms) Drain Current — Continuous @ 25°C — Continuous @ 100°C — Single Pulse (tp ≤ 10 µs) Total Power Dissipation @ 25°C Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy — STARTING TJ = 25°C (VDD = 25 Vdc, VGS = 5 Vdc, PEAK IL = 42 Apk, L = 0.
3 mH, RG = 25 Ω) Thermal Resistance — Junction to Case — Junction to Ambient G S CASE 221A–06, Style 5 TO–220AB Symbol VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tstg EAS RθJC RθJA TL Value 60 60 ± 1...



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