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MTP50N06V

Part Number	MTP50N06V
Manufacturer	Motorola
Description	TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM
Published	Nov 2, 2005
Detailed Description	MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP50N06V/D TMOS Power Field Effect Transisto...
Datasheet	MTP50N06V PDF File

Overview

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP50N06V/D TMOS Power Field Effect Transistor TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs.
This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices.
Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes.
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
™ Data Sheet V™ MTP50N06V Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.
028 OHM TM D New Features of TMOS V • On–resistance Area Product about One–half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E–FET Predecessors Features Common to TMOS V and TMOS E–FETS • Avalanche Energy Specified • IDSS and VDS(on) Specified at Elevated Temperature • Static Parameters are the Same for both TMOS V and TMOS E–FET G S CASE 221A–06, Style 5 TO–220AB MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.
0 MΩ) Gate–Source Voltage — Continuous Gate–Source Voltage — Non–Repetitive (tp ≤ 10 ms) Drain Current — Continuous @ 25°C Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation @ 25°C Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL = 42 Apk, L = 0.
454 µH, RG = 25 Ω) Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient Maximum Lead Temperature for Soldering Purpose...

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MTP50N06VL TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM - Motorola

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