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IRFP054N

Power MOSFET
Part Number IRFP054N
Manufacturer Power MOSFET
Description Power MOSFET
Published Nov 11, 2005
Detailed Description PD - 9.1382A IRFP054N HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating ...
Datasheet PDF File IRFP054N PDF File

IRFP054N
IRFP054N

Overview
PD - 9.
1382A IRFP054N HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.
012Ω G ID = 81A† S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices.
The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current … Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ‚… Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ… Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max.
81† 57 290 170 1.
1 ± 20 360 43 17 5.
0 -55 to + 175 300 (1.
6mm from case ) 10 lbf•in (1.
1N•m) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ.
––– 0.
24 ––– Max.
0.
90 ––– 40 Units °C/W 8/25/97 IRFP054N Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆ V(BR)DSS/∆T J RDS(on) VGS(th) gfs IDSS I GSS Qg Q gs Qgd t d(on) tr t d(off) tf LD LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Thre...


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