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STP14NF12

ST Microelectronics
Part Number STP14NF12
Manufacturer ST Microelectronics
Description N-CHANNEL Power MOSFET
Published Nov 18, 2005
Detailed Description STP14NF12 STP14NF12FP N-CHANNEL 120V - 0.16Ω - 14A TO-220/TO-220FP LOW GATE CHARGE STripFET™ POWER MOSFET TYPE STP14NF12...
Datasheet PDF File STP14NF12 PDF File

STP14NF12
STP14NF12

Overview
STP14NF12 STP14NF12FP N-CHANNEL 120V - 0.
16Ω - 14A TO-220/TO-220FP LOW GATE CHARGE STripFET™ POWER MOSFET TYPE STP14NF12 STP14NF12FP s s s VDSS 120 V 120 V RDS(on) < 0.
18 Ω < 0.
18 Ω ID 14 A 14 A TYPICAL RDS(on) = 0.
16Ω EXCEPTIONAL dv/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION TO-220 3 1 2 1 3 2 TO-220FP DESCRIPTION This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge.
It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application.
It is also intended for any application with low gate charge drive requirements INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL s ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) EAS (2) VISO Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature -55 to 175 (1) ISD ≤14A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX.
(2) Starting Tj = 25°C, ID = 14A, VDD = 50V Value STP14NF12 120 120 ±20 14 9 56 60 0.
4 9 60 2500 8.
5 6 34 25 0.
17 STP14NF12FP Unit V V V A A A W W/°C V/ns mJ V °C (q ) Pulse width limited by safe operating area August 2002 1/9 STP14NF12/STP14NF12FP THERMAL DATA TO-220 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 2.
5 62.
5 300 TO-220FP 6 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Curr...


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