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STP14NF06

ST Microelectronics
Part Number STP14NF06
Manufacturer ST Microelectronics
Description N-CHANNEL Power MOSFET
Published Nov 18, 2005
Detailed Description N-CHANNEL 60V - 0.1Ω - 14A TO-220 STripFET™ POWER MOSFET TYPE STP14NF10 s s s s STP14NF06 VDSS 60 V RDS(on) < 0.12 Ω ...
Datasheet PDF File STP14NF06 PDF File

STP14NF06
STP14NF06


Overview
N-CHANNEL 60V - 0.
1Ω - 14A TO-220 STripFET™ POWER MOSFET TYPE STP14NF10 s s s s STP14NF06 VDSS 60 V RDS(on) < 0.
12 Ω ID 14 A TYPICAL RDS(on) = 0.
1Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE AT 100 °C APPLICATION ORIENTED CHARACTERIZATION 1 2 3 TO-220 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process.
The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s AUTOMOTIVE ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max.
Operating Junction Temperature Value 60 60 ±20 14 10 56 45 0.
3 6 50 –65 to 175 175 (1) I SD ≤7A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, T j ≤ TJMAX.
(2) Starting T j = 25°C, I D = 114A, VDD = 15V Unit V V V A A A W W/°C V/ns mJ °C °C (q) Pulse width limited by safe operating area December 2000 1/8 STP14NF06 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 3.
33 62.
5 300 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC...


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