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2SB1110

Hitachi Semiconductor
Part Number 2SB1110
Manufacturer Hitachi Semiconductor
Description PNP Transistor
Published Dec 4, 2005
Detailed Description 2SB1109, 2SB1110 Silicon PNP Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SD1609...
Datasheet PDF File 2SB1110 PDF File

2SB1110
2SB1110

Overview
2SB1109, 2SB1110 Silicon PNP Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SD1609 and 2SD1610 Outline TO-126 MOD 123 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 1.
Emitter 2.
Collector 3.
Base Ratings 2SB1109 –160 –160 –5 –100 1.
25 150 –45 to +150 2SB1110 –200 –200 –5 –100 1.
25 150 –45 to +150 Unit V V V mA W °C °C 2SB1109, 2SB1110 Electrical Characteristics (Ta = 25°C) 2SB1109 2SB1110 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –160 — — –200 — —V IC = –10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO –160 — — –200 — —V IC = –1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –5 — — –5 — — V IE = –10 µA, IC = 0 Collector cutoff current ICBO DC current tarnsfer ratio h *1 FE1 — — –10 — — — µA VCB = –140 V, IE = 0 — — — — — –10 µA VCE = –160 V, IE = 0 60 — 320 60 — 320 VCE = –5 V, IC = –10 mA hFE2 Base to emitter voltage VBE Collector to emitter saturation voltage VCE(sat) 30 — — 30 — — — — –1.
5 — — –1.
5 V — — –2 — — –2 V VCE = –5 V, IC = –1 mA IC = –5 V, IC = –10 mA IC = –30 mA, IB = –3 mA Gain bandwidth product fT — 140 — — 140 — MHz VCE = –5 V, IC = –10 mA Collector output capacitance Cob — 5.
5 — — 5.
5 — pF VCB = –10 V, IE = 0, f = 1 MHz Note: 1.
The 2SB1109 and 2SB1110 are grouped by hFE1 as follows.
B 60 to 120 CD 100 to 200 160 to 320 Collector power dissipation Pc (W) Collector Current IC (mA) Maximum Collector Dissipation Curve 1.
5 1.
0 0.
0 0 50 100 150 Ambient Temperature Ta (°C) Typical Output Characteristics –20 –16 –120 –110 –100 –12 –90 –80 –70 –8 –60 –50 –40 –4 –30 –20 –10 µA IB = 0 0 –2 –4 –6 –8 –10 Collector to emitter Voltage VCE (V) 2 Collector Current IC (mA) Ta = 75°C 25 –25 DC current...


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