DatasheetsPDF.com

FLM0910-12F

ETC
Part Number FLM0910-12F
Manufacturer ETC
Description X-Band Internally Matched FET
Published Dec 29, 2005
Detailed Description FLM0910-12F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=40.5dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・...
Datasheet PDF File FLM0910-12F PDF File

FLM0910-12F
FLM0910-12F


Overview
FLM0910-12F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=40.
5dBm(Typ.
) ・High Gain: G1dB=7.
0dB(Typ.
) ・High PAE: ηadd=25%(Typ.
) ・Broad Band: 9.
5~10.
5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM0910-12F is a power GaAs FET that is internally matched for standard communication and radar bands to provide optimum power and gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PTot Tstg Tch Rating 15 -5 57.
6 -65 to +175 175 Unit V V W oC oC RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25°C) Item DC Input Voltage Gate Current Gate Current Symbol VDS IGS IGR RG=50Ω RG=50Ω Condition Limit Unit V mA mA ≤10 ≤32.
0 ≥-5.
6 ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C) Item Drain Current Transconductance Pinch-off Voltage Gate-Source Breakdown Voltage Symbol IDSS gm Vp VGSO P1dB G1dB Idsr Test Conditions VDS=5V, VGS=0V VDS=5V, IDS=3.
6A VDS=5V, IDS=300mA IGS=-340uA VDS=10V f=9.
5 - 10.
5 GHz IDS=0.
5Idss (typ.
) Zs=ZL=50Ω Min.
-0.
5 -5.
0 39.
5 6.
0 - Limit Typ.
6.
0 5000 -1.
5 40.
5 7.
0 3.
5 25 2.
3 - Max.
9.
0 -3.
0 4.
5 1.
2 2.
6 80 Unit A mS V V dBm dB A % dB o Output Power at 1dB G.
C.
P.
Power Gain at 1dB G.
C.
P.
Drain Current Power-added Efficiency Gain Flatness Thermal Resistance Channel Temperature Rise ηadd ∆G Rth ∆Tch Channel to Case 10V X Idsr X Rth - C/W o C CASE STYLE: IB G.
C.
P.
:Gain Compression Point, S.
C.
L.
:Single Carrier Level Note:RF-Test is measured with Vgs-Constant Circuit.
ESD Edition 1.
2 September 2004 Class Ⅲ 2000V　~ Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.
5kΩ) 1 FLM0910-12F X-Band Internally Matched FET POWER DERATING CURVE OUTPUT POWER , POWER ADDED EFFICIENCY vs.
INPUT POWER Vds=10V, Ids=0.
5IDSS 60 Total Power Dissipation [W] 50 42 40 Output power [dBm] 38 36 34 32 30 P.
A.
E.
Pout 70 Power Added Efficiency [%} 60 50 40 30 20 1...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)