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FLM0910-15F

SUMITOMO
Part Number FLM0910-15F
Manufacturer SUMITOMO
Description X-Band Internally Matched FET
Published Jul 14, 2014
Detailed Description FLM0910-15F X-Band Internally Matched FET FEATURES •E High Output Power: P1dB=42.0dBm(Typ.) •E High Gain: G1dB=7.5dB(Typ...
Datasheet PDF File FLM0910-15F PDF File

FLM0910-15F
FLM0910-15F

Overview
FLM0910-15F X-Band Internally Matched FET FEATURES •E High Output Power: P1dB=42.
0dBm(Typ.
) •E High Gain: G1dB=7.
5dB(Typ.
) •E High PAE: ηadd=32%(Typ.
) •E Broad Band: 9.
5~10.
5GHz •E Impedance Matched Zin/Zout = 50Ω Hermetically Ε Sealed Package DESCRIPTION The FLM0910-15F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 o C) Ite m Drain-Source Voltage Gate-Source Voltage Total Pow e r Dissipation Storage Temperature Channe l Te m perature Symbol V DS V GS PT Tstg Tch Rating 15 -5 57.
7 -65 to +175 175 Unit V V W oC oC RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25 o C) Ite m DC Input Voltage Forw ard Gate Current Reverse Gate Current Symbol V DS IGF IGR Condition RG=50 ohm RG=50 ohm Lim it 10 •… 16.
7 •… •† -3.
62 Unit V mA mA ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 o C) Ite m Drain Current Trans conductance Pinch-off Voltage Gate-Source Breakdown Voltage Output Pow e r at 1dB G.
C.
P.
Pow e r Gain at 1dB G.
C.
P.
Drain Current Pow e r -added Efficiency Gain Flatne s s Therm al Re s istance Channe l Te m perature Rise CASE STYLE : IB ESD Clas s III 2000V •@ ~ Symbol IDSS gm Vp V GSO P1dB G1dB Idsr Nadd ∆G Rth ∆ Tch Condition V DS=5V , V GS=0V V DS=5V , IDS=3.
5A V DS=5V , IDS=300mA IGS=-300uA V DS=10V IDS=0.
5IDSS (typ.
) f= 9.
5 ~ 10.
5 GHz Zs=Z L=50 ohm Channel to Case 10V x Idsr X Rth M in.
-0.
5 -5.
0 41.
0 6.
5 Lim it Typ.
7.
2 4500 -1.
5 42.
0 7.
5 4.
0 32 2.
3 M ax.
10.
8 -3.
0 5.
0 1.
2 2.
6 100 Unit A mS V V dBm dB A % dB o C/W oC G.
C.
P.
: Gain Compression Point, S.
C.
L.
: Single Carrier Lev el Edition 1.
1 May 2005 1 FLM0910-15F X-Band Internally Matched FET OUTPUT POWER v.
s.
FREQUENCY OUTPUT POWER , POWER ADDED EFFICIENCY v.
s.
INPUT POWER Vds=10V, Ids=0.
5Idss 44 Output Power Level [dBm] 70 60 50 Efficiency [%] Pout PAE 40 30 20 10 Vds=10V, Ids=0.
5Idss 44 42 Output Power [dBm] 42 40 38 36 34 32 30 22 24 26 28 30 32 34 36 40 38 ...


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