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SSS4N60B

Fairchild Semiconductor
Part Number SSS4N60B
Manufacturer Fairchild Semiconductor
Description 600V N-Channel MOSFET
Published Jan 14, 2006
Detailed Description SSP4N60B/SSS4N60B SSP4N60B/SSS4N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power fi...
Datasheet PDF File SSS4N60B PDF File

SSS4N60B
SSS4N60B

Overview
SSP4N60B/SSS4N60B SSP4N60B/SSS4N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supplies.
Features • • • • • • • 4.
0A, 600V, RDS(on) = 2.
5Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability TO-220F package isolation = 4.
0kV (Note 6) D G G DS TO-220 SSP Series GD S TO-220F SSS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) SSP4N60B 600 4.
0 2.
5 16 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) SSS4N60B 4.
0 * 2.
5 * 16 * 240 4.
0 10 5.
5 Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 100 0.
8 -55 to +150 300 33 0.
26 * Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
SSP4N60B 1.
25 0.
5 62.
5 SSS4N60B 3.
79 -62.
5 Units °C/W °C/W °C/W ©2002 Fairchild Semiconductor Corporation Rev.
B, June 2002 SSP4N60B/SSS4N60B Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units...


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