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SSS4N60AS

Fairchild Semiconductor
Part Number SSS4N60AS
Manufacturer Fairchild Semiconductor
Description Advanced Power MOSFET
Published Feb 3, 2015
Detailed Description Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved...
Datasheet PDF File SSS4N60AS PDF File

SSS4N60AS
SSS4N60AS

Overview
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.
) @ VDS = 600V Lower RDS(ON) : 2.
037 Ω (Typ.
) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 oC) Continuous Drain Current (TC=100 oC) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche Energy O2 Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25oC) Linear Derating Factor O1 O1 O3 Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Purposes, 1/8 “ from case for 5-seconds SSS4N60AS BVDSS = 600 V RDS(on) = 2.
2 Ω ID = 2.
3 A TO-220F 1 2 3 1.
Gate 2.
Drain 3.
Source Value 600 2.
3 1.
5 16 +_ 30 260 2.
3 3.
3 3.
0 33 0.
26 - 55 to +150 300 Units V A A V mJ A mJ V/ns W W/oC oC Thermal Resistance Symbol R θJC RθJA Characteristic Junction-to-Case Junction-to-Ambient ©1999 Fairchild Semiconductor Corporation Typ.
--- Max.
3.
79 62.
5 Units oC/W Rev.
B SSS4N60AS N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25oC unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Min.
Typ.
Max.
Units Test Condition Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coeff.
Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current 600 -- --- 0.
68 -2.
0 -- 4.
0 -- -- 100 -- -- -100 -- -- 25 -- -- 250 V VGS=0V,ID=250µA V/oC ID=250 µA See Fig 7 V VDS=5V,ID=250 µA nA VGS=30V VGS=-30V VDS=600V µA VDS=480V,TC=125 oC Static Drain-Source On-State Resistance -- -- 2.
2 Ω VGS=10V,ID=1.
15A O4 Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance 2.
0 -- 3.
0 Ω VDS=50V,ID=1.
15A O4 450 -- ...


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