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MRF21060R3

Part Number	MRF21060R3
Manufacturer	Motorola
Description	RF Power Field Effect Transistors
Published	Jan 16, 2006
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF21060/D The RF MOSFET ...
Datasheet	MRF21060R3 PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.
Order this document by MRF21060/D The RF MOSFET Line RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from 2.
1 to 2.
2 GHz.
Suitable for W - CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications.
• Typical W - CDMA Performance: 2140 MHz, 28 Volts 5 MHz Offset @ 4.
096 MHz BW, 15 DTCH Output Power — 6.
0 Watts Power Gain — 12.
5 dB Drain Efficiency — 15% • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.
11 GHz, 60 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • In Tape and Reel.
R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
N - Channel Enhancement - Mode Lateral MOSFETs MRF21060R3 MRF21060SR3 2170 MHz, 60 W, 28 V LATERAL N - CHANNEL RF POWER MOSFETs Freescale Semiconductor, Inc.
.
.
CASE 465 - 06, STYLE 1 NI - 780 MRF21060R3 CASE 465A - 06, STYLE 1 NI - 780S MRF21060SR3 MAXIMUM RATINGS Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 - 0.
5, +15 180 0.
98 - 65 to +150 200 Unit Vdc Vdc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 1.
02 Unit °C/W ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge.
Reasonable precautions in handling and packaging MOS devices should be observed.
REV 6 MOTOROLA RF DEVICE DATA  Motorola, Inc.
2004 For More Information On This Product, Go to: www.
freescale.
com MRF21060R3 MRF21060SR3 1 Freescale Se...

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