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MRF16006

Tyco Electronics
Part Number MRF16006
Manufacturer Tyco Electronics
Description RF POWER TRANSISTOR
Published Jan 25, 2006
Detailed Description SEMICONDUCTOR TECHNICAL DATA Order this document by MRF16006/D The RF Line NPN Silicon RF Power Transistor Designed f...
Datasheet PDF File MRF16006 PDF File

MRF16006
MRF16006

Overview
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF16006/D The RF Line NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz.
• Specified 28 Volt, 1.
6 GHz Class–C Characteristics Output Power = 6 Watts Minimum Gain = 7.
4 dB, @ 6 Watts Minimum Efficiency = 40% @ 6 Watts • Characterized with Series Equivalent Large–Signal Parameters from 1500 MHz to 1700 MHz • Silicon Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration MRF16006 6.
0 WATTS, 1.
6 GHz RF POWER TRANSISTOR NPN SILICON CASE 395C–01, STYLE 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector–Emitter Voltage Emitter–Base Voltage Collector–Current Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Symbol VCES VEBO IC PD Tstg Value 60 4.
0 1.
0 26 0.
15 –65 to +150 Unit Vdc Vdc Adc Watts W/°C °C THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case (1) (2) RθJC 6.
8 °C/W (1) Thermal measurement performed using CW RF operating condition.
(2) Thermal resistance is determined under specified RF operating conditions by infrared measurement techniques.
REV 2 1 MRF16006 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 40 mAdc, VBE = 0) Collector–Base Breakdown Voltage (IC = 40 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 2.
5 mAdc, IC = 0) Collector Cutoff Current (VCE = 28 Vdc, VBE = 0) V(BR)CES 55 V(BR)CBO 55 V(BR)EBO 4.
0 ICES — — 2.
5 — — mAdc — — Vdc — — Vdc Vdc ON CHARACTERISTICS DC Current Gain (ICE = 0.
2 Adc, VCE = 5.
0 Vdc) hFE 20 — 80 — DYNAMIC CHARACTERISTICS Output Capacitance (VCB= 28 Vdc, f = 1.
0 MHz) Cob 11 — — pf FUNCTIONAL TESTS Common–Base Amplifier Power Gain (VCC = 28 Vdc, Pout = 6 Watts, f = 1600/1640 MHz) Collector Efficiency (VCC = 28 Vdc, Pout = 6 Watts, f = 1600/1...


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