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MRF160

Tyco Electronics
Part Number MRF160
Manufacturer Tyco Electronics
Description MOSFET BROADBAND RF POWER FET
Published Jan 25, 2006
Detailed Description SEMICONDUCTOR TECHNICAL DATA Order this document by MRF160/D The RF MOSFET Line Power Field Effect Transistor N–Chann...
Datasheet PDF File MRF160 PDF File

MRF160
MRF160

Overview
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF160/D The RF MOSFET Line Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET • Guaranteed 28 Volt, 500 MHz Performance Output Power = 4.
0 Watts Gain = 16 dB (Min) Efficiency = 55% (Typ) • Excellent Thermal Stability, Ideally Suited for Class A Operation • Facilitates Manual Gain Control, ALC and Modulation Techniques • 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR • Low Crss – 0.
8 pF Typical at VDS = 28 Volts Designed primarily for wideband large–signal output and driver from 30–500 MHz.
MRF160 To 500 MHz, 4 W, 28 V MOSFET BROADBAND RF POWER FET D G S CASE 249–06, STYLE 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain–Gate Voltage Drain–Gate Voltage (RGS = 1.
0 MΩ) Gate–Source Voltage Drain Current–Continuous Total Device Dissipation @ TC = 25°C Derate Above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Value 65 65 ± 20 1.
0 24 0.
14 – 65 to +150 200 Unit Vdc Vdc Vdc ADC Watts W/°C °C °C THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case RθJC 7.
2 °C/W NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge.
Reasonable precautions in handling and packaging MOS devices should be observed.
REV 5 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VDS = 0 Vdc, VGS = 0 Vdc, ID = 1.
0 mA) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 V) Gate–Source Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) V(BR)DSS 65 IDSS — IGSS — — 1.
0 — 0.
5 µA — — mA Vdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 10 mA) Drain Source On–Voltage (VDS (on), VGS = 10 Vdc, ID = 500 mA) Forward Transconductance (VDS = 10 Vdc, ID = 250 mA) VGS(th) 1.
5 VDS(on) — gfs 150 220 — 3.
8 — mS 3.
0 4.
5 Vdc Vdc DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 28 Vdc, VGS = 0 V, f = 1.
0 MHz) O...


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