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2N5045

Siliconix
Part Number 2N5045
Manufacturer Siliconix
Description monolithic dual n-channel JFET
Published Feb 21, 2006
Detailed Description monolithic dual n-channel JFETs designed for . . . H Siliconix Performance Curves NQP See Sedion 4 • High Gain Differe...
Datasheet PDF File 2N5045 PDF File

2N5045
2N5045

Overview
monolithic dual n-channel JFETs designed for .
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H Siliconix Performance Curves NQP See Sedion 4 • High Gain Differential Amplifiers BENEFITS • Minimum System Error and Calibration 5 mV Offset Maximum (2N5045) • Low Drift 5 mV Drift Maximum (2N5045) *ABSOLUTE MAXIMUM RATINGS (25°C) TO-71 See Section 6 Gate-Drain or Gate-Source Voltage -50 V Forward Gate Current.
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30 mA Total Dissipation (25°C Free Air Temp.
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400 mW Power Derating (to 175°C).
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67 mW/oC Storage Temperature Range .
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-65 to +200°C Lead Temperature (1/16" from case for 10 seconds) .
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300°C *ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) 52 D2 ~o .
,3 6 PGl O 2 °D, 01 G2 Bottom View Characteristic (Note 1) 2NS04S 2NS046 2NS047 I _ - , .
- - - + - , .
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- - t - - , - - - I Unit Min Max Min Max Min Max Test Conditions 1.
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2.
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S -1 -1 -1 pA 1.
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2.
I~ 4 T ~ I IGSS Gate Reverse Current 1_-+--0_.
2",5-+--+-_0,.
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2_5+---+_-0".
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2",5-1 nA VGS = -30 V.
VDS = 0 V ~V-G-S(-Of-f-I---G-at-e~~-o-ur-ce-c-u-tO-f-f-V-ol-ta-ge-1-2--S_00-.
s~-~"'.
--2sS1-0_-0-.
s~-~-.
-s2~S-_0-0-s1--~-.
-s1-V~-rV-D-S-=-lS-V"'.
"'I-DT-==~olS-.
05'"C"n-A~~--------1 15 C lOSS Drain SaturatIOn Curren' O.
S 8.
0 O.
S 80 O.
S 8.
0 rnA VDS = lSV.
VGS = 0 --6- Common-5ource Forward Transconductance 1.
5 60 1.
5 6.
0 1.
5 60 I--------------_+--_-+_-+_--+-_+-~mmho 7 IVfsl ~~~~~~;:urce Forward 15 1 S 1.
5 ---S DI-----~c,.
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o-rn-rn-on-.
".
so-u-rc-e~O,.
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u-'p-u-t--+--1--2-S+--+--2S-+--+--2-5+-"rnh-o-l Y 90S Conductance ,.
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---g M~I------c-o-rn-rn-o-n.
-so-u-rc-e-I-np-u-t--+---+--+--+--t--+---t--;VDS=15V.
VGS=OV CISS Capacitance 80 80 8.
0 - - - I I------~-------_+--I_-+_-+_--+--+-~ pF 10 C Crss ~~a~~:rnc:~~~~a~::erse 4 0 4.
0 40 11 NF Spot NOise Figure 50 5.
0 dS f=l kHz f=100MHz f=l kHz f=l MHz f=10 Hz.
RG=l Mn -- 12 ~n EqUivalent Short·Circuit Input NOISe Voltage 200 200 ~nV f=10 Hz 13 IIGSS1-IG...


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