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MSA-0785

Hewlett-Packard
Part Number MSA-0785
Manufacturer Hewlett-Packard
Description Cascadable Silicon Bipolar MMIC Amplifier
Published Mar 3, 2006
Detailed Description Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0785 Features • Cascadable 50 Ω Gain Block • Low Operatin...
Datasheet PDF File MSA-0785 PDF File

MSA-0785
MSA-0785

Overview
Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0785 Features • Cascadable 50 Ω Gain Block • Low Operating Voltage: 4.
0 V Typical Vd • 3 dB Bandwidth: DC to 2.
0 GHz • 12.
5 dB Typical Gain at 1.
0␣ GHz • Unconditionally Stable (k>1) • Low Cost Plastic Package plastic package.
This MMIC is designed for use as a general purpose 50 Ω gain block.
Typical applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications.
The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability.
The use of an external bias resistor for temperature and current stability also allows bias flexibility.
85 Plastic Package Description The MSA-0785 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost Typical Biasing Configuration R bias VCC > 5 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 4.
0 V 2 5965-9593E 6-402 MSA-0785 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 60 mA 275 mW +13 dBm 150°C –65 to 150°C Thermal Resistance[2,4]: θjc = 110°C/W Notes: 1.
Permanent damage may occur if any of these limits are exceeded.
2.
TCASE = 25°C.
3.
Derate at 9.
1 mW/°C for TC > 120°C.
4.
See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C Symbol GP ∆G P f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT Parameters and Test Conditions: Id = 22 mA, ZO = 50 Ω Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth Input VSWR Output VSWR 50 Ω Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.
1 to 2.
5 GHz f = 0.
1 to 2.
5 GHz f = 1.
0 GHz f = 1.
0 GHz f = 1.
0 GHz f = 1.
0 GHz f = 0.
1 G...


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