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MSA-0786

Hewlett-Packard
Part Number MSA-0786
Manufacturer Hewlett-Packard
Description Cascadable Silicon Bipolar MMIC Amplifier
Published Mar 3, 2006
Detailed Description Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0786 Features • Cascadable 50 Ω Gain Block • Low Operating...
Datasheet PDF File MSA-0786 PDF File

MSA-0786
MSA-0786

Overview
Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0786 Features • Cascadable 50 Ω Gain Block • Low Operating Voltage: 4.
0 V Typical Vd • 3 dB Bandwidth: DC to 2.
0 GHz • 12.
5 dB Typical Gain at 1.
0 GHz • Unconditionally Stable (k>1) • Surface Mount Plastic Package • Tape-and-Reel Packaging Option Available[1] Note: 1.
Refer to PACKAGING section “Tapeand-Reel Packaging for Semiconductor Devices.
” Description The MSA-0786 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount plastic package.
This MMIC is designed for use as a general purpose 50 Ω gain block.
Applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications.
The MSA-series is fabricated using Agilent’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metalli- 86 Plastic Package zation to achieve excellent performance, uniformity and reliability.
The use of an external bias resistor for temperature and current stability also allows bias flexibility.
Typical Biasing Configuration R bias VCC > 5 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 4.
0 V 2 2 MSA-0786 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 60 mA 275 mW +13 dBm 150°C –65 to 150°C Thermal Resistance[2,4]: θjc = 120°C/W Notes: 1.
Permanent damage may occur if any of these limits are exceeded.
2.
TCASE = 25°C.
3.
Derate at 8.
3 mW/°C for TC > 117°C.
4.
See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C Symbol GP ∆G P f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT Parameters and Test Conditions: Id = 22 mA, ZO = 50 Ω Power Gain (|S 21| 2) f = 0.
1 GHz f = 1.
0 GHz f = 0.
1 to 1.
3 GHz f = 0.
1 to 2.
5 GHz f = 0.
1 to 2.
5 GHz f = 1.
0 GHz f = 1.
0 GHz f = 1.
0 GHz f = 1.
0 GHz Units dB Min.
10.
5 Typ.
13.
5 12...


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