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RN2606

Toshiba Semiconductor
Part Number RN2606
Manufacturer Toshiba Semiconductor
Description Silicon PNP Transistor
Published Mar 7, 2006
Detailed Description RN2601~RN2606 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2601,RN2602,RN2603 RN2604,RN2605,RN2606 Swi...
Datasheet PDF File RN2606 PDF File

RN2606
RN2606



Overview
RN2601~RN2606 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2601,RN2602,RN2603 RN2604,RN2605,RN2606 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1601~1606 Unit in mm Equivalent Circuit and Bias Resistor Values Type No.
RN2601 RN2602 RN2603 RN2604 RN2605 RN2606 R1 (kΩ) 4.
7 10 22 47 2.
2 4.
7 R2 (kΩ) 4.
7 10 22 47 47 47 JEDEC EIAJ TOSHIBA Weight: 0.
015g ― ― 2-3N1A Equivalent Circuit (Top View) Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN2601~2606 RN2601~2606 RN2601~2604 RN2605, 2606 Symbol VCBO VCEO VEBO IC P C* Tj Tstg Rating −50 −50 −10 −5 −100 300 150 −55~150 Unit V V V mA mW °C °C * Total rating 1 2001-06-05 RN2601~RN2606 Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristic Collector cut-off current RN2601~2606 RN2601 RN2602 Emitter cut-off current RN2603 RN2604 RN2605 RN2606 RN2601 RN2602 DC current gain RN2603 RN2604 RN2605 RN2606 Collector-emitter saturation voltage RN2601~2606 RN2601 RN2602 Input voltage (ON) RN2603 RN2604 RN2605 RN2606 Input voltage (OFF) Translation frequency Collector output capacitance RN2601~2604 RN2605, 2606 RN2601~2606 RN2601~2606 RN2601 RN2602 Input resistor RN2603 RN2604 RN2605 RN2606 RN2601~2604 Resistor ratio RN2605 RN2606 R1/R2 R1 VI (OFF) fT Cob VI (ON) VCE (sat) hFE IEBO Symbol ICBO ICEO Test Circuit ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― VCE = −5V, IC = −0.
1mA VCE = −10V, IC = −5mA VCB = −10V, IE = 0 f = 1MHz VCE = −0.
2V IC = −5mA IC = −5mA IB = −0.
25mA VCE = −5V IC = −10mA VEB = −5V, IC = 0 VEB = −10V, IC = 0 Test Condition VCB = −50V, IE = 0 VCE = −50V, IB = 0 Min ...



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