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RN2607

Toshiba Semiconductor
Part Number RN2607
Manufacturer Toshiba Semiconductor
Description Silicon PNP Transistor
Published Mar 7, 2006
Detailed Description RN2607~RN2609 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2607,RN2608,RN2609 Switching, Inverter Circ...
Datasheet PDF File RN2607 PDF File

RN2607
RN2607

Overview
RN2607~RN2609 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2607,RN2608,RN2609 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Including two devices in SM6 (super mini type with 6 leads) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN1607~RN1609 Unit in mm Equivalent Circuit andBias Resistor Values Type No.
RN2607 RN2608 RN2609 R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 JEDEC EIAJ TOSHIBA Weight: 0.
015g ― ― 2-3N1A Eauivalent Circuit (Top View) Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage RN2607~RN2609 RN2607 Emitter-base voltage RN2608 RN2609 Collector current Collector power dissipation Junction temperature Storage temperature range IC P C* Tj Tstg VEBO Symbol VCBO VCEO Rating −50 −50 −6 −7 −15 −100 300 150 −55~150 mA mW °C °C V Unit V V * Total rating 1 2001-06-05 RN2607~RN2609 Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristic Collector cut-off current RN2607~RN2609 RN2607 Emitter cut-off current RN2608 RN2609 RN2607 DC current gain RN2608 RN2609 Collector-emitter saturation voltage RN2607~RN2609 RN2607 Input voltage (ON) RN2608 RN2609 RN2607 Input voltage (OFF) RN2608 RN2609 Translation frequency Collector output capacitance RN2607~RN2609 RN2607~RN2609 RN2607 Input resistor RN2608 RN2609 RN2607 Resistor ratio RN2608 RN2609 R1/R2 R1 fT Cob VI (OFF) VI (ON) VCE (sat) hFE IEBO Symbol ICBO ICEO Test Circuit ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― VCE = −10V, IC = −5mA VCB = −10V, IE = 0 f = 1MHz VCE = −5V, IC = −0.
1mA VCE = −0.
2V, IC = −5mA IC = −5mA, IB = −0.
25mA VCE = −5V, IC = −10mA Test Condition VCB = −50V, IE = 0 VCE = −50V, IB = 0 VEB = −6V, IC = 0 VEB = −7V, IC = 0 VEB = −15V, IC = 0 Min ― ― −0.
081 −0.
078 −0.
167 80 80 70 ― −0.
7 −1.
0 −2.
2 −0.
5 −0.
6 −1.
5 ― ― 7 15.
4 32.
9 0.
191 0.
421 1.
92 Typ.
― ― ― ― ― ― ― ― −0.
1 ― ― ― ― ― ― 200 3 10 22 47 0.
213 0.
468 2...


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