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STP4NA80

ST Microelectronics
Part Number STP4NA80
Manufacturer ST Microelectronics
Description N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Published Jun 11, 2006
Detailed Description www.DataSheet4U.com STP4NA80 STP4NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP4NA80 STP4NA80FI...
Datasheet PDF File STP4NA80 PDF File

STP4NA80
STP4NA80

Overview
www.
DataSheet4U.
com STP4NA80 STP4NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP4NA80 STP4NA80FI s s s s s s s V DSS 800 V 800 V R DS( on) < 3Ω < 3Ω ID 4A 2.
5 A TYPICAL RDS(on) = 2.
4 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220 3 1 2 1 2 3 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology.
The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE s ISOWATT220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter STP4NA80 VD S V DG R V GS ID ID ID M( •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (RG S = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 oC Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) 800 800 ± 30 4 2.
5 16 o Value STP4NA80FI Unit V V V 2.
5 1.
6 16 45 0.
36 2000 A A A W W/o C V o o w w w a D .
(•) Pulse width limited by safe operating area S a t t e he Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max.
Operating Junction Temperature 4U .
c om 110 0.
88  -65 to 150 150 C C February 1994 1/10 www.
DataSheet4U.
com STP4NA80/FI THERMAL DATA TO-220 R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max 1.
13 62.
5 0.
5 300 ISOWATT220 2.
77 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol IA R E AS E AR IA R Parameter Avalanche Current, Repetitive or Not-...


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