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IRFR430B

Fairchild Semiconductor
Part Number IRFR430B
Manufacturer Fairchild Semiconductor
Description 500V N-Channel MOSFET
Published Jul 24, 2006
Detailed Description www.DataSheet4U.com IRFR430B / IRFU430B November 2001 IRFR430B / IRFU430B 500V N-Channel MOSFET General Description T...
Datasheet PDF File IRFR430B PDF File

IRFR430B
IRFR430B

Overview
www.
DataSheet4U.
com IRFR430B / IRFU430B November 2001 IRFR430B / IRFU430B 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.
Features • • • • • • 3.
5A, 500V, RDS(on) = 1.
5Ω @VGS = 10 V Low gate charge ( typical 25 nC) Low Crss ( typical 16 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● D ◀ ▲ ● ● G S D-PAK IRFR Series I-PAK G D S IRFU Series G! DataShee DataSheet4U.
com ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted ...


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