DatasheetsPDF.com

K4M563233G

Part Number	K4M563233G
Manufacturer	Samsung semiconductor
Description	2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
Published	Aug 1, 2006
Detailed Description	com K4M563233G - F(H)N/G/L/F 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power s...
Datasheet	K4M563233G PDF File

Overview

...upply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-.
CAS latency (1, 2 & 3).
-.
Burst length (1, 2, 4, 8 & Full page).
-.
Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• Special Function Support.
-.
PASR (Partial Array Self Refresh).
-.
Internal TCSR (Temperature Compensated Self Refresh) • DQM for masking.
• Auto refresh.
• • • • 64ms refresh period (4K cycle).
Commercial Temperature Operation (-25°C ~ 70°C).
Extended Temperature Operation (-25°C ~ 85°C).
90Balls FBGA ( -FXXX -Pb, -...

Similar Datasheet

K4M563233D 8Mx32 Mobile SDRAM 90FBGA - Samsung
K4M563233E 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA - Samsung semiconductor
K4M563233G 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA - Samsung semiconductor
K4M56323LE 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA - Samsung semiconductor
K4M56323PG-C 2M x 32Bit x 4 Banks Mobile SDRAM - Samsung semiconductor
K4M56323PG-F 2M x 32Bit x 4 Banks Mobile SDRAM - Samsung semiconductor
K4M56323PG-FE 2M x 32Bit x 4 Banks Mobile SDRAM - Samsung semiconductor
K4M56323PG-G 2M x 32Bit x 4 Banks Mobile SDRAM - Samsung semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)