DatasheetsPDF.com

XL1000


Part Number XL1000
Manufacturer Mimix Broadband
Title 20.0-40.0 GHz GaAs MMIC Low Noise Amplifier
Description Mimix Broadband’s three stage 20.0-40.0 GHz GaAs Absolute Maximum Ratings MMIC low noise amplifier has a small signal gain of 20.0 dB with a nois...
Features Self Bias Architecture Small Size 3.0 or 5.0 V Operation 20.0 dB Small Signal Gain 2.0 dB Noise Figure +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband’s three stage 20.0-40.0 GHz GaA...

File Size 1.12MB
Datasheet XL1000 PDF File








Similar Ai Datasheet

XL1000-BD : M/A-COM Tech’s three stage 20.0-40.0 GHz GaAs MMIC low noise amplifier has a small signal gain of 20.0 dB with a noise figure of 2.0 dB across the band. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Chip Device Layout Rev. V1 Absolute Maximum Ratings Parameter Absolute Max. Supply Voltage.

XL1001 : Mimix Broadband’s two stage balanced 17.0-35.0 GHz GaAs MMIC low noise amplifier has a small signal gain Absolute Maximum Ratings of 14.0 dB with a noise figure of 2.5 dB across the Supply Voltage (Vd) +6.0 VDC band. This MMIC uses Mimix Broadband’s 0.15 µm Supply Current (Id) 85 mA GaAs PHEMT device model technology, and is based Input Power (Pin) +15.0 dBm upon electron beam lithography to ensure high Storage Temperature (Tstg) -65 to +165 OC repeatability and uniformity. The chip has surface Operating Temperature (Ta) -55 to MTTF Table1 passivation to protect and provide a rugged part with Channel Temperature (Tch) MTTF Table1 backside via holes and gold metallization to allow DataSheet4U.

XL1002 : Mimix Broadband’s three stage balanced 20.0-36.0 GHz GaAs MMIC low noise amplifier has a small signal Absolute Maximum Ratings gain of 23.0 dB with a noise figure of 2.6 dB across the Supply Voltage (Vd) +6.0 VDC band. This MMIC uses Mimix Broadband’s 0.15 µm Supply Current (Id) 120 mA GaAs PHEMT device model technology, and is based Input Power (Pin) +15.0 dBm upon electron beam lithography to ensure high Storage Temperature (Tstg) -65 to +165 OC repeatability and uniformity. The chip has surface Operating Temperature (Ta) -55 to MTTF Table1 passivation to protect and provide a rugged part with Channel Temperature (Tch) MTTF Table 1 backside via holes and gold metallization to allow DataShe.

XL1002-BD : M/A-COM Tech’s three stage balanced 20.0-36.0 GHz GaAs MMIC low noise amplifier has a small signal gain of 23.0 dB with a noise figure of 2.6 dB across the band. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Ordering Information Part Number Package XL1002-BD-000V “V” - vacuum release gel p.

XL1003 : Mimix Broadband’s three stage output balanced 24.0-40.0 GHz GaAs MMIC low noise amplifier has a Absolute Maximum Ratings small signal gain of 24.0 dB with a noise figure of 1.7 Supply Voltage (Vd) +5.5 VDC dB across the band. This MMIC uses Mimix Supply Current (Id) 130 mA Broadband’s 0.1 µm GaAs PHEMT device model Input Power (Pin) -5.0/-1.0 dBm technology, and is based upon electron beam Storage Temperature (Tstg) -65 to +165 OC lithography to ensure high repeatability and Operating Temperature (Ta) -55 to MTTF Table1 uniformity. The chip has surface passivation to protect Channel Temperature (Tch) MTTF Table1 and provide a rugged part with backside via holes DataSheet4U.com and gold metal.

XL1004 : Mimix Broadband’s three stage balanced 35.0-45.0 GHz GaAs MMIC low noise amplifier has a small signal Absolute Maximum Ratings gain of 17.0 dB with a noise figure of 1.8 dB across the Supply Voltage (Vd) +5.5 VDC band. This MMIC uses Mimix Broadband’s 0.15 µm Supply Current (Id) 130 mA GaAs PHEMT device model technology, and is based Input Power (Pin) -5.0/-1.0 dBm upon electron beam lithography to ensure high Storage Temperature (Tstg) -65 to +165 OC repeatability and uniformity. The chip has surface Operating Temperature (Ta) -55 to MTTF Table1 passivation to protect and provide a rugged part with Channel Temperature (Tch) MTTF Table1 backside via holes and gold metallization to allow Data.

XL1005 : Mimix Broadband’s single stage 5.0-20.0 GHz GaAs Absolute Maximum Ratings MMIC low noise amplifier has a small signal gain of 13.0 dB with a noise figure of 2.2 dB across the band. This Supply Voltage (Vd1) +5.5 VDC MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT Supply Current (Id) 120 mA device model technology, and is based upon electron Gate Bias Voltage (Vg1) +0.3 VDC beam lithography to ensure high repeatability and Gate Bias Voltage (Vg2) TBD uniformity. The chip has surface passivation to protect Input Power (Pin) +15.0 dBm and provide a rugged part with backside via holes and Storage Temperature (Tstg) -65 to +165 OC gold metallization to allow either a conductive DataSheet4U.com epo.

XL1007-QT : Mimix Broadband’s 3.5 to 8.0 GHz low noise amplifier is packaged in surface mount 3x3 QFN package. The device is a self-biased, single supply design with 12 dB gain and 2 dB noise figure. This MMIC uses Mimix Broadband’s 0.25um optical pHEMT process. Absolute Maximum Ratings Supply Voltage RF Input Power Storage Temperature (Tstg) Junction Temperature Operating Temperature +6 V +10 dBm -55 ºC to +125 ºC 175 ºC -40 ºC to +85ºC www.DataSheet4U.com Operation beyond these conditions may cause permanent damage to the device. Electrical Characteristics (T=25ºC) Parameter Frequency Range Gain Input Return Loss Noise Figure Output P1dB Output IP3 Supply Voltage Units GHz dB dB dBm dBm V Min. 3.5.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)