DatasheetsPDF.com

XL1000

Mimix Broadband
Part Number XL1000
Manufacturer Mimix Broadband
Description 20.0-40.0 GHz GaAs MMIC Low Noise Amplifier
Published Aug 10, 2006
Detailed Description www.DataSheet4U.com 20.0-40.0 GHz GaAs MMIC Low Noise Amplifier April 2005 - Rev 01-Apr-05 L1000 Chip Device Layout F...
Datasheet PDF File XL1000 PDF File

XL1000
XL1000

Overview
www.
DataSheet4U.
com 20.
0-40.
0 GHz GaAs MMIC Low Noise Amplifier April 2005 - Rev 01-Apr-05 L1000 Chip Device Layout Features Self Bias Architecture Small Size 3.
0 or 5.
0 V Operation 20.
0 dB Small Signal Gain 2.
0 dB Noise Figure +9.
0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband’s three stage 20.
0-40.
0 GHz GaAs Absolute Maximum Ratings MMIC low noise amplifier has a small signal gain of 20.
0 dB with a noise figure of 2.
0 dB across the band.
This Supply Voltage (Vd) +7.
0 VDC MMIC uses Mimix Broadband’s 0.
15 µm GaAs PHEMT Supply Current (Id) 70 mA device model technology, and is based upon electron Input Power (Pin) +12 dBm beam lithography to ensure high repeatability and Storage Temperature (Tstg) -65 to +165 OC uniformity.
The chip has surface passivation to protect Operating Temperature (Ta) -55 to MTTF Table 1 and provide a rugged part with backside via holes and Channel Temperature (Tch) MTTF Table 1 gold metallization to allow either a conductive DataSheet4U.
com epoxy (1) Channel temperature affects a device's MTTF.
It is or eutectic solder die attach process.
This device is well recommended to keep channel temperature as low as possible for maximum life.
suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
DataShee Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Input Return Loss (S11) 2 @ 22.
0-36.
0 GHz Output Return Loss (S22) 2 @ 22.
0-36.
0 GHz Small Signal Gain (S21)2 Gain Flatness (∆S21) Reverse Isolation (S12) 2 Noise Figure (NF)2 @ 24.
0-40.
0 GHz Output Power for 1 dB Compression (P1dB) Output Third Order Intercept Point (OIP3) Drain Bias Voltage (Vd) Supply Current (Id) (Vd=3.
0V or 5.
0V) Units GHz dB dB dB dB dB dB dBm dBm VDC mA Min.
20.
0 6.
0 4.
0 12.
0 30.
0 Typ.
12.
0 10.
0 20.
0 +/-4.
0 45.
0 2.
0 +9.
0 +16.
0 +3.
0 35 Max.
40.
0 +5.
0 50 (2) Unless otherwise indicated min/m...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)